Method of fabricating a thin film transistor in which the channe

Details Method of fabricating a thin film transistor in which the channe Method of fabricating a thin film transistor in which the channe

1996-07-17

1999-07-27

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

117 8, 438487, 438486, H01L 21336

Patent

active

059306084

ABSTRACT:
A semiconductor device which is excellent in reliability and electrical characteristics. The semiconductor device is formed on an insulating substrate. A channel region is formed between a source and a drain by the voltage applied to a gate electrode. The channel region, the source, and the drain are fabricated from a semiconductor having a large mobility. The other regions including the portion located under the channel region are fabricated from a semiconductor having a small mobility.

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