Method of fabricating a thin film transistor having a U-shaped g

Details Method of fabricating a thin film transistor having a U-shaped g Method of fabricating a thin film transistor having a U-shaped g

1999-07-08

2000-08-08

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438286, 438302, 438585, 438595, H01L 21336

Patent

active

06100121&

ABSTRACT:
A thin film transistor and a fabrication method thereof which are capable of increasing an ON/OFF current ratio and simplifying a fabrication process by eliminating a masking process. The thin film transistor includes a substrate, an active layer formed on the substrate, a U-shaped gate electrode formed on the active layer and the substrate and having an opening portion inwardly extended from one edge surface thereof, an offset region formed in the active layer matching with the opening portion, and impurity regions formed within the active layer at both sides of the gate electrode.

REFERENCES:
patent: 4771012 (1988-09-01), Yabu et al.
patent: 5151374 (1992-09-01), Wu
patent: 5736416 (1998-04-01), Johansson
patent: 5741718 (1998-04-01), Codama et al.
patent: 5741736 (1998-04-01), Orlowski et al.
patent: 5804837 (1998-09-01), Han et al.
patent: 5889303 (1999-03-01), Eckert et al.

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