Method of fabricating a thin film transistor array substrate

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S155000, C257S059000, C257SE21412, C349S046000

Reexamination Certificate

active

07402470

ABSTRACT:
A thin film transistor array substrate and a fabricating method for simplifying a process and reducing a manufacturing cost. In the thin film transistor array substrate, a gate line is formed on a substrate and a gate insulating film is formed on the gate line. A data line is provided in such a manner to intersect the gate line with having the gate insulating film therebetween, and contains any at least one of tungsten silicide (WSix), cobalt silicide (CoSix) and nickel silicide (NiSix). A thin film transistor is provided at each intersection between the gate line and the data line. A pixel electrode is provided at a pixel area defined by each intersection between the gate line and the data line and is connected to the thin film transistor.

REFERENCES:
patent: 6140230 (2000-10-01), Li
patent: 6285041 (2001-09-01), Noguchi
patent: 6346477 (2002-02-01), Kaloyeros et al.
patent: 2002/0093016 (2002-07-01), Lim et al.
patent: 2002/0182818 (2002-12-01), Kiziloglu et al.
patent: 2003/0197182 (2003-10-01), Kim et al.
patent: 2004/0056251 (2004-03-01), Kim et al.
patent: 2004/0195571 (2004-10-01), Ahn et al.

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