Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-07-05
2005-07-05
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
Reexamination Certificate
active
06913957
ABSTRACT:
A method of fabricating a thin film transistor array substrate is described. A gate and a scan line electrically connected to the gate are formed on a substrate. A gate insulating layer is formed over the substrate. A patterned channel layer and a patterned ohmic contact layer are formed on the gate insulating layer above the gate. A transparent conductive layer and a metal layer are formed and patterned to define a source/drain region, a data line and a pixel region. A passivation layer exposing the metal layer on the pixel region is formed over the substrate. The metal layer exposed by the passivation layer is removed to expose the transparent conductive layer on the pixel region, using the passivation layer as a photomask, so as to form a pixel electrode. Since the process only needs four photomasks, the process cost can be reduced.
REFERENCES:
patent: 5407845 (1995-04-01), Nasu et al.
patent: 6255130 (2001-07-01), Kim
Jiang Chyun IP office
Quanta Display Inc.
Thompson Craig A.
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