Method of fabricating a TFT device formed by printing

Details Method of fabricating a TFT device formed by printing Method of fabricating a TFT device formed by printing

2006-12-12

2006-12-12

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S942000, C101S327000, C101S328000, C101S329000, C257SE21372

Reexamination Certificate

active

07148090

ABSTRACT:
A thin-film transistor for an active matrix display is fabricated using printing means, such as a gravure offset printer. First and second pattern layers (251, 252; 30) are formed on a layer structure (4) wherein at least one of the layers is printed. The printed layers (251, 252; 30) mask regions (271, 272, 28) for defining source a and drain terminals. The second pattern layer (28) can be removed so as to allow etching of the second region (28) for defining a channel.

REFERENCES:
patent: 5130829 (1992-07-01), Shannon
patent: 2002/0187592 (2002-12-01), Wong
patent: 0 471 628 (1992-02-01), None
patent: 0471628 (1992-02-01), None
patent: 60133758 (1985-07-01), None

Affiliated with

Also associated with

Rating

Method of fabricating a TFT device formed by printing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a TFT device formed by printing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a TFT device formed by printing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3673452