Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2008-10-02
2010-11-09
Chambliss, Alonzo (Department: 2892)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S706000, C257S415000, C257SE21218, C257SE21249, C257SE21613, C257SE29324, C216S002000, C216S072000, C216S079000
Reexamination Certificate
active
07829364
ABSTRACT:
A suspension microstructure and its fabrication method, in which the method comprises the steps of: forming at least one insulation layer with inner micro-electro-mechanical structures on an upper surface of a silicon substrate, the micro-electro-mechanical structure includes at least one microstructure and a plurality of metal circuits that are independent from each other, the micro-electro-mechanical structures have an exposed portion on the surface of the insulation layer, and the exposed portion is provided with through holes or stacked metal-via layers correspondingly to the predetermined etching spaces of the micro-electro-mechanical structures, the above predetermined etching spaces and the stacked metal-via layers only penetrate the insulation layer; forming a photoresist with an opening on the upper surface of the exposed portion, and the opening of the photoresist is located outside all the through holes or the stacked metal-via layers; subsequently, conducting etching to realize the suspension of the microstructures.
REFERENCES:
patent: 6617657 (2003-09-01), Yao et al.
patent: 7435612 (2008-10-01), Xiao et al.
patent: 2004/0227201 (2004-11-01), Borwick et al.
patent: 2009/0061578 (2009-03-01), Tan et al.
patent: 2009/0227060 (2009-09-01), Tan
Chambliss Alonzo
MEMSMART Semiconductor Corporation
Shia Banger
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