Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-09-23
2000-11-07
Wilczewski, Mary
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438622, 438624, 438625, 438634, 438637, H01L 21768
Patent
active
061436402
ABSTRACT:
A structure and method for connecting two levels of interconnect vertically spaced from each other by another level of interconnect by forming a first interconnect region to which contact is to be made, a first insulating layer over the interconnect region, and an etch-stop layer over the first insulating layer, and etching the etch stop layer to form an opening at a position over the first interconnect region. A second interconnect region is formed in contact with the first insulating layer and above the first interconnect region, a second insulating layer is formed over the first insulation layer and the etch stop layer, and an opening is formed in the second insulating layer overlapping the opening in the etch stop layer. The opening in the second insulating layer is extended through the first insulating layer and the openings in the first and second insulating layers are filled with a conductor to create a connection between the first interconnect region and a region above the second insulating layer.
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Cronin John E.
Luther Barbara J.
International Business Machines - Corporation
Lin Yung A.
Peterson Peter W.
Walter, Jr. Howard J.
Wilczewski Mary
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