Method of fabricating a silicon single crystal

Details Method of fabricating a silicon single crystal Method of fabricating a silicon single crystal

1997-12-29

2000-02-29

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 14, 117 15, 117 20, C30B 1500

Patent

active

060304502

ABSTRACT:
The cooling speed of the portion near the rear part of a single-crystal body and passing through the defect-forming temperature zone is kept the same as that of the front portion of the single-crystal body. Namely, the heater is kept in operation while pulling the single crystal silicon subsequent to forming the tail of the single crystal silicon and the cooling speed throughout the whole single-crystal body in the defect-forming temperature zone is kept below 15.degree. C./min (levels A and B). Furthermore, the length of the tail is preset in the process of pulling the single crystal silicon so that the single-crystal body cools down slowly while passing through the defect-forming temperature zone (level C). In addition, the temperature of the portion near the rear part of the single-crystal body under pulling is below the minimum temperature of the defect-forming temperature zone by shortening the distance between melted liquid surface and the portion passing through the defect-forming temperature zone of the single-crystal, and by increasing the temperature gradient along the single-crystal axis (level D).

REFERENCES:
patent: 5474020 (1995-12-01), Bell et al.
patent: 5487355 (1996-01-01), Chiou et al.
patent: 5779791 (1998-07-01), Korb et al.

Affiliated with

Also associated with

Rating

Method of fabricating a silicon single crystal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a silicon single crystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a silicon single crystal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-679051