Method of fabricating a silicon-on-insulator device with a...

Details Method of fabricating a silicon-on-insulator device with a... Method of fabricating a silicon-on-insulator device with a...

2007-11-27

2007-11-27

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C438S373000, C438S374000

Reexamination Certificate

active

11331258

ABSTRACT:
A fabrication process for a silicon-on-insulator (SOI) device includes defining an active region in an 501 substrate, doping the entire active region with an impurity of a given conductive type, masking a main part of the active region, and doping the peripheral parts of the active region at least two additional times with an impurity of the same conductive type, preferably using different doping parameters each time. The additional, doping creates a channel stop in the peripheral parts of the active region, counteracting the tendency of the transistor threshold voltage to be lowered in the peripheral parts of the active region, thereby mitigating or eliminating the unwanted subthreshold hump often found in the transistor operating characteristics of, for example, fully depleted SOI devices.

REFERENCES:
patent: 6670682 (2003-12-01), Mouli

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