Semiconductor device manufacturing: process – Gettering of substrate
Patent
1997-09-10
1999-05-04
Bowers, Charles
Semiconductor device manufacturing: process
Gettering of substrate
205746, C02F 1461
Patent
active
058997318
ABSTRACT:
A method of fabricating a semiconductor wafers, which can prevent metal contamination when alkali etching is used. A semiconductor ingot is cut into wafers. The peripheral portion of the sliced wafers is chamfered. The chamfered wafers are then planarized by lapping. The planarized wafers are alkali etched. The alkali etched wafers are subjected to acid washing by using diluted mixed acid solution. The surface of the acid-washed wafers are then polished. The polished wafers are washed again.
REFERENCES:
patent: 5635053 (1995-10-01), Aoki et al.
Stanley Wolf Silicon Procesing for the VLSI Era Lattice Press pp. 24, 25, 516, 1986.
Kai Fumitaka
Kawate Kenji
Maeda Masahiko
Blum David S.
Bowers Charles
Komatsu Electronic Metals Co. Ltd.
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