Method of fabricating a semiconductor pressure sensor

Details Method of fabricating a semiconductor pressure sensor Method of fabricating a semiconductor pressure sensor

1987-12-08

1990-12-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437901, 148DIG135, 148DIG12, 357 56, 156657, H01L 21306

Patent

active

049753908

ABSTRACT:
Herein disclosed is a semiconductor pressure sensor and a method of manufacture. The sensor includes a plate having a recess in its main surface. A diaphragm has a lower surface therof bonded to a first main surface of the plate and formed so as to have an upper surface having no holes therein. A piezoresistive layer is formed so as to be in contact with the diaphragm and is positioned so as to be at least partially over the recess. The resistance of the piezoresistive layer provides an indication of pressure applied to the diaphragm. The manufacturing method includes forming a piezoresistive layer of a single crystal substrate in a diaphragm without any recrystallization.

REFERENCES:
patent: 3757414 (1973-09-01), Keller
patent: 3922705 (1975-11-01), Yerman
patent: 4103273 (1978-07-01), Keller
patent: 4121334 (1978-10-01), Wallis
patent: 4234361 (1980-11-01), Gackel
patent: 4463336 (1984-07-01), Black
patent: 4510671 (1985-04-01), Kurtz
patent: 4784721 (1988-11-01), Holmen

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