Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-06
2010-10-05
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S513000, C257SE29129, C257SE21681, C438S264000, C438S424000, C438S435000, C438S594000
Reexamination Certificate
active
07808031
ABSTRACT:
The present fabrication method includes the steps of: providing a nitride film in a main surface of a semiconductor substrate; providing an upper trench, with the nitride film used as a mask; filling the upper trench with an oxide film introduced therein; removing the oxide film to expose at least a portion of a bottom of the upper trench and allowing a remainder of the oxide film to serve as a sidewall; providing a lower trench in a bottom of the upper trench, with the sidewall used as a mask; and with the upper trench having the sidewall remaining therein, providing an oxide film in the upper trench and the lower trench. This can provide a semiconductor device fabrication method and a semiconductor device preventing a contact from penetrating the device in an interconnection process.
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Shimizu Satoshi
Sugihara Tsuyoshi
Sumino Jun
Ho Hoang-Quan T
Huynh Andy
McDermott Will & Emery LLP
Renesas Technology Corp.
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