Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-15
2005-03-15
Elms, Richard (Department: 2824)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S604000, C438S605000, C438S637000, C438S906000
Reexamination Certificate
active
06867120
ABSTRACT:
In a semiconductor device, particles are removed from the surface of a gold conductive layer before an intermediate insulating layer of an amino silane compound is formed. An organic insulating layer is formed on the intermediate insulating layer. As a result, adhesion strength between the conductive layer and the intermediate insulating layer can be improved.
REFERENCES:
patent: 3649882 (1972-03-01), Hoffman et al.
patent: 5106771 (1992-04-01), Emerson et al.
patent: 6043518 (2000-03-01), Hsu et al.
patent: 6162878 (2000-12-01), Osada et al.
patent: 6187615 (2001-02-01), Kim et al.
patent: 6225698 (2001-05-01), Tang
patent: 6300234 (2001-10-01), Flynn et al.
patent: 6333268 (2001-12-01), Starov et al.
patent: 6492198 (2002-12-01), Hwang
patent: 20020020855 (2002-02-01), Hwang
patent: 20030153172 (2003-08-01), Yajima et al.
patent: 20040000712 (2004-01-01), Wilson et al.
patent: 08-213380 (1996-08-01), None
Ren et al., Improvement of ohmic contacts on GaAs with in situ cleaning,Appl. Phys. Lett., 58 (Mar. 1991) 1030.*
Kim et al., Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment,Appl. Phys. Lett., 73 (Nov. 1998) 2953.*
Kang et al., Surface preparation and effective contact formation for GaAs surface,Vacuum, 67 (2002) 91.*
Kniffin et al., The effect of aqueous chemical cleaning procedures on Schottky contacts to n-type GaAs,Mat. Res. Soc. Symp. Proc., 181 (1990) 565.
Ikeya Masahisa
Okajima Takehiko
Elms Richard
Oki Electric Industry Co. Ltd.
Volentine Francos & Whitt P.L.L.C.
Wilson Christian D.
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