Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-03-06
2007-03-06
Padgett, Marianne (Department: 1762)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C427S554000, C427S557000, C427S559000, C427S556000, C438S164000, C438S487000
Reexamination Certificate
active
10752994
ABSTRACT:
A very thin oxide film is formed on an amorphous silicon film that is formed on a glass substrate, and an aqueous solution such as an acetate solution added with a catalyst element such as nickel by 10 to 200 ppm (adjustment needed) is dropped thereon. After the structure is held in this state for a predetermined period, spin drying is performed by using a spinner. A crystalline silicon film is obtained by subjecting the structure to a heat treatment of 550° C. and 4 hours and then to laser light irradiation. A crystalline silicon film having a smaller defect concentration is obtained by further performing a heat treatment of 550° C. and 4 hours.
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Fukunaga Takeshi
Miyanaga Akiharu
Ohtani Hisashi
Costellia Jeffrey L.
Nixon & Peabody LLP
Padgett Marianne
Semiconductor Energy Laboratory Co,. Ltd.
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