Method of fabricating a semiconductor device using plasma to...

Details Method of fabricating a semiconductor device using plasma to... Method of fabricating a semiconductor device using plasma to...

2005-06-29

2009-08-25

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S789000, C257SE21278

Reexamination Certificate

active

07579286

ABSTRACT:
A fabrication method of a semiconductor device is disclosed by which damage to another film or exfoliation of a film is prevented and an insulating film having a dielectric constant of 2.5 or less can be formed while a film strength is maintained without deteriorating a wiring line characteristic. According to an embodiment, an insulating film is formed on a substrate by a plasma process, which uses film-forming gas having a ring structure of Si—O bonds, such that it maintains the ring structure of the Si—O bonds. According to another embodiment, an insulating film is formed on a substrate by a plasma process, which uses film-forming gas which contains silane-containing gas and oxygen gas or film-forming gas which contains Si—O bond-containing gas, such that it has a ring structure of the Si—O bonds.

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Japanese Office Action issued on Apr. 8, 2008.

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