Method of fabricating a semiconductor device including a plurali

Details Method of fabricating a semiconductor device including a plurali Method of fabricating a semiconductor device including a plurali

1996-12-10

1999-02-09

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438633, 438634, 438648, H01L 2128

Patent

active

058693920

ABSTRACT:
A method of fabricating a semiconductor device, which is capable of effectively forming high reliability contacts in a plurality of regions to be contacted which are formed at different depths. The method includes the steps of: forming an etching stopper layer on an insulating layer covering a plurality of the regions to be contacted and having a stepped shape; selectively forming, in a lower height area of the insulating layer having the stepped shape, a conductive plug layer connected to a deeper region to be contacted which is formed under the lower height area of the insulating layer; forming a planarization layer on the lower height area of the insulating layer, followed by planarization over the entire surface; and selectively forming contact holes reaching the plug layer and other shallower regions to be contacted, simultaneously.

REFERENCES:
patent: 4996167 (1991-02-01), Chen
patent: 5210053 (1993-05-01), Yamagata
patent: 5244837 (1993-09-01), Dennison
patent: 5286675 (1994-02-01), Chen et al.
patent: 5459100 (1995-10-01), Choi
patent: 5563097 (1996-10-01), Lee

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