Method of fabricating a semiconductor device including a...

Details Method of fabricating a semiconductor device including a... Method of fabricating a semiconductor device including a...

2006-02-14

2006-02-14

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S780000, C438S623000, C438S624000

Reexamination Certificate

active

06998356

ABSTRACT:
A method of fabricating a semiconductor device including a silicon-containing dielectric layer is provided. In one embodiment, a silicon-containing material is deposited on a substrate. The deposited material is processed with a reactive agent to react with silicon atoms of the deposited material to form the dielectric layer. The silicon-containing dielectric layer provides for improved or smaller semiconductor devices by reducing leakage and increasing the dielectric constant.

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