Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-10-01
2000-08-01
Smith, Matthew
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438197, 438652, 438655, 438656, 257508, H01L 2144
Patent
active
060966432
ABSTRACT:
A semiconductor device and fabrication process are provided in which a polysilicon line is disposed on a substrate of the semiconductor device. The polysilicon line may, for example, be a gate electrode. A dielectric layer is disposed adjacent the polysilicon line and an extended silicide layer is formed over the polysilicon line. The extended silicide layer may be formed by forming a patterned metal layer over the polysilicon line, forming a polysilicon layer over the patterned metal layer, and reacting the patterned metal layer with the polysilicon layer to form the extended silicide layer over the polysilicon line. The device may further include a second polysilicon line, such as a gate electrode, and the silicide layer may extend over the top of the second polysilicon line and interconnects the two polysilicon lines.
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S. M. Ku, Ohmic Contacts For Small, Shallow Structure Devices, IBM Technical Disclosure Bulletin, 1487-1488, Sep. 1979.
Fulford H. Jim
May Charles E.
Nariman Homi E.
Advanced Micro Devices , Inc.
Hullinger Robert A.
Smith Matthew
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