Method of fabricating a semiconductor device having metal...

Details Method of fabricating a semiconductor device having metal... Method of fabricating a semiconductor device having metal...

2004-12-20

2008-03-04

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S736000, C257SE21578

Reexamination Certificate

active

07338897

ABSTRACT:
A method of fabricating a semiconductor device includes forming a metal wire on a substrate, forming an interlayer insulating film on the metal wire, forming a resist pattern on the interlayer insulating film, selectively etching the interlayer film to form a trench or via-hole in the interlayer insulating film and reaching the metal wire, and ashing, using a reducing gas, to remove the resist pattern.

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Kojima et al., “Mechanism of Cu Oxidation in Ashing Process”, 2001 Dry Process International Symposium V-1, pp. 165-168.

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