Method of fabricating a semiconductor device having fluorine bea

Details Method of fabricating a semiconductor device having fluorine bea Method of fabricating a semiconductor device having fluorine bea

1997-08-19

2000-04-11

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438782, 257347, 257348, H01L 21441

Patent

active

060488034

ABSTRACT:
A semiconductor device having relatively low permittivity fluorine bearing oxide between conductive lines and a method for fabricating such a device is provided. At least two adjacent conductive lines are formed over a substrate. An oxide layer is formed between the adjacent conductive lines. A mask is formed over the oxide layer and selectively removed to expose a portion of the oxide layer between the adjacent conductive lines. A fluorine bearing species is implanted into the exposed portion of the oxide layer to reduce the permittivity of the oxide layer between the adjacent conductive lines. The permittivity or dielectric constant of the oxide layer between the adjacent conductive lines can, for example, be reduced from about 3.9 to 4.2 to about 3.0 to 3.5.

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