Method of fabricating a semiconductor device having first...

Details Method of fabricating a semiconductor device having first... Method of fabricating a semiconductor device having first...

2006-07-26

2009-06-23

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S427000, C257SE21683

Reexamination Certificate

active

07550363

ABSTRACT:
A semiconductor device comprising a trench device isolation layer and a method for fabricating the semiconductor device are disclosed. The method comprises forming a plurality of first trenches on a first region of a semiconductor substrate, filling the first trenches with a first insulation material to form first device isolation layers, forming a plurality of second trenches on a second region of the semiconductor substrate, and filling the second trenches with a second insulation material different from the first insulation material to form second device isolation layers, wherein the first trenches and the second trenches are formed using different respective processes.

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