Method of fabricating a semiconductor device having an insulatin

Details Method of fabricating a semiconductor device having an insulatin Method of fabricating a semiconductor device having an insulatin

1994-09-28

1997-09-02

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

438675, 438681, H01L 2144

Patent

active

056630972

ABSTRACT:
A method of fabricating semiconductor devices comprises the following process of: forming an electrode leading out window having its vertical side wall at a given position in the functional element formed on a semiconductor substrate; forming an insulating film on the surface of the side wall; and depositing an electrode metal in the leading out window.

REFERENCES:
patent: 4531282 (1985-07-01), Sakai et al.
patent: 4546536 (1985-10-01), Anantha et al.
patent: 4621413 (1986-11-01), Lowe et al.
patent: 4814846 (1989-03-01), Matsumoto et al.
patent: 4816889 (1989-03-01), Matsumoto
patent: 4816899 (1989-03-01), Strolle et al.
patent: 4879254 (1989-11-01), Tsuzuki et al.
patent: 4885259 (1989-12-01), Osinski et al.
patent: 4892837 (1990-01-01), Kudo
patent: 5006911 (1991-04-01), Sivan
patent: 5010026 (1991-04-01), Gomi
patent: 5089425 (1992-02-01), Hoshi et al.
patent: 5208172 (1993-05-01), Fitch et al.
patent: 5279976 (1994-01-01), Hayden et al.
patent: 5296391 (1994-03-01), Sato et al.

Affiliated with

Also associated with

Rating

Method of fabricating a semiconductor device having an insulatin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a semiconductor device having an insulatin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor device having an insulatin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-307705