Method of fabricating a semiconductor device having an Au electr

Details Method of fabricating a semiconductor device having an Au electr Method of fabricating a semiconductor device having an Au electr

1995-12-21

1997-04-08

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438720, 438669, H01L 2144

Patent

active

056187548

ABSTRACT:
A semiconductor device having an Au electrode is fabricated as follows. As a first step, an insulating film is formed on a semiconductor substrate. As a second step, a contact hole is selectively formed in the insulating film to expose a part of the substrate. As a third step, a barrier metal layer is formed on an entire surface of a resultant structure to bury at least a part of the contact hole and form a barrier metal layer on the insulating film. As a fourth step, an Au layer is selectively formed on the barrier metal layer. As a fifth step, reactive dry etching is performed using the Au layer as a mask and using an etching gas, obtained by adding an O.sub.2 gas to a mixed gas of at least one type of chlorine based gas selected from a group of a chlorine gas and a carbon chloride gas, and at least one type of fluorine based gas selected from a group of a carbon fluoride gas and a carbon hydrogen fluoride gas in such a manner that a flow rate ratio of (O.sub.2):(chlorine based gas):(fluorine based gas) becomes (1):(4 to 24):(1 to 6), thereby the barrier metal layer is etched out.

REFERENCES:
patent: 3550260 (1970-12-01), Saltich et al.
patent: 4184909 (1980-01-01), Chang et al.
patent: 4361599 (1982-10-01), Wourms
patent: 5240554 (1993-08-01), Hori et al.
patent: 5310695 (1994-05-01), Suzuki
patent: 5453156 (1995-09-01), Cher et al.

Affiliated with

Also associated with

Rating

Method of fabricating a semiconductor device having an Au electr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a semiconductor device having an Au electr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor device having an Au electr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2397548