Method of fabricating a semiconductor device having a silicon ni

Details Method of fabricating a semiconductor device having a silicon ni Method of fabricating a semiconductor device having a silicon ni

1996-08-16

1999-03-02

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

H01L 21306

Patent

active

058770950

ABSTRACT:
A semiconductor device includes a semiconductor element. A silicon nitride film covers the semiconductor element. The silicon nitride film is made of Si.sub.X N.sub.Y H.sub.Z, where X, Y, and Z denote atomic fractions of Si, N, and H resptively. The silicon nitride film relates to an optical absorption edge wavelength shorter than 254 nm. A mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5.times.10.sup.4 nm.sup.2 or more. The semiconductor element may include a memory element from which information can be erased by exposure to ultraviolet rays.

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