Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having a perfecting coating
Reexamination Certificate
2006-01-17
2006-01-17
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having a perfecting coating
C438S460000, C438S978000, C438S462000, C438S114000, C438S282000, C438S920000, C438S542000
Reexamination Certificate
active
06987054
ABSTRACT:
A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.
REFERENCES:
patent: 3838501 (1974-10-01), Wayne
patent: 4610079 (1986-09-01), Abe et al.
patent: 4814296 (1989-03-01), Jedlicka et al.
patent: 4937129 (1990-06-01), Yamazaki
patent: 5152857 (1992-10-01), Ito et al.
patent: 5481386 (1996-01-01), Shimano et al.
patent: 6049124 (2000-04-01), Raiser et al.
patent: 6271102 (2001-08-01), Brouillette et al.
patent: 58079739 (1983-05-01), None
patent: 61-152358 (1986-07-01), None
patent: 63-62679 (1988-03-01), None
patent: 03187242 (1991-08-01), None
patent: 03187242 (1991-08-01), None
patent: 04025154 (1992-01-01), None
patent: 05-55278 (1993-03-01), None
patent: 06216241 (1994-08-01), None
patent: 8-66850 (1996-03-01), None
patent: 09097973 (1997-04-01), None
patent: 09219421 (1997-08-01), None
patent: 09321181 (1997-12-01), None
patent: 11-111653 (1999-04-01), None
patent: 11-111896 (1999-04-01), None
patent: 11111896 (1999-04-01), None
patent: 11121647 (1999-04-01), None
patent: 376574 (1999-12-01), None
Fukasawa Norio
Hamanaka Yuzo
Matsuki Hirohisa
Morioka Muneharu
Nagashige Kenichi
Fujitsu Limited
Huynh Yennhu B.
Jr. Carl Whitehead
Westerman Hattori Daniels & Adrian LLP
LandOfFree
Method of fabricating a semiconductor device having a groove... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating a semiconductor device having a groove..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor device having a groove... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3537735