Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Containing germanium – ge
Reexamination Certificate
2006-10-31
2006-10-31
Schillinger, Laura M. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Containing germanium, ge
C257S600000, C257S119000
Reexamination Certificate
active
07129563
ABSTRACT:
A process and a device for fabricating a semiconductor device having a gate dielectric made of high-k material, includes a step of depositing, directly on the gate dielectric, a first layer of Si1−xGex, where 0.5<x≦1, at a temperature substantially below the temperature at which a poly-Si is deposited by thermal chemical vapor deposition (CVD).
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Bensahel Daniel
Campidelli Yves
Cosnier Vincent
Kermarrec Olivier
Morand Yves
Bongini Stephen
Fleit Kain Gibbons Gutman Bongini & Bianco P.L.
Jorgenson Lisa K.
Schillinger Laura M.
STMicroelectronics SA
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