Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-02-06
2007-02-06
Tran, Thien F. (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S164000, C438S479000, C438S514000, C438S517000
Reexamination Certificate
active
11013516
ABSTRACT:
One aspect of the present invention is forming a gate electrode over a semiconductor layer; doping the semiconductor layer with an impurity through the gate electrode in the first doping and without passing through the gate electrode in the second doping. Since two kinds of n31-type impurity regions are formed in the semiconductor layer, an off current can be reduced, and deterioration of characteristics can be suppressed.
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Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Tran Thien F.
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