Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

2007-01-10

2009-12-08

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S733000, C257SE21008, C257SE21017

Reexamination Certificate

active

07629222

ABSTRACT:
A method of fabricating a semiconductor device includes forming a first electrode, sequentially forming a first dielectric film, a conductive film for a second electrode, a second dielectric film, and a conductive film for a third electrode above the first electrode, forming a first pattern on the conductive film for a third electrode, the first pattern defining a second electrode, forming the second electrode by sequentially patterning the conductive film for the third electrode, the second dielectric film, and the conductive film for the second electrode, using the first pattern as an etching mask, partially removing the first pattern to form a second pattern that defines a third electrode, and forming the third electrode by patterning the conductive film for the third electrode, using the second pattern as an etching mask, wherein the third electrode has a width less than that of the second electrode.

REFERENCES:
patent: 6319767 (2001-11-01), Cha et al.
patent: 6924207 (2005-08-01), Son et al.
patent: 2004/0014248 (2004-01-01), Kim
patent: 2004/0041231 (2004-03-01), Koido et al.
patent: 2004/0201057 (2004-10-01), Lien et al.
patent: 2005/0051793 (2005-03-01), Ishida et al.
patent: 2005/0062130 (2005-03-01), Ciancio et al.
patent: 2005/0070031 (2005-03-01), Imai et al.
patent: 2005/0161720 (2005-07-01), Park
patent: 2006/0197090 (2006-09-01), Huang et al.

Affiliated with

Also associated with

Rating

Method of fabricating a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4141005