Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

1994-11-01

1995-10-17

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566461, 1566511, 1566441, 1566621, H01L 2100

Patent

active

054587344

ABSTRACT:
A method of fabricating a semiconductor device wherein, when etching a single-crystal silicon film or polysilicon film according to a dry etching process in which SF.sub.6 is used as a main etching gas, a deposition film is formed beforehand on the surface of the material to be etched by performing etching using a fluorine family etching gas which contains C and H. In the initial stage of etching, by using this deposition film as a mask to prevent etching in the vertical direction (direction of depth), etching of the material advances in the horizontal direction and thus the material having tapered etched shape is obtained. In doing so, there are accomplished good filling properties and good coverage and levelness.

REFERENCES:
patent: 4579623 (1986-04-01), Suzuki et al.
patent: 4604162 (1986-08-01), Sobczak
patent: 4729815 (1988-03-01), Leung
patent: 4855017 (1989-08-01), Douglas
patent: 4992136 (1991-02-01), Tachi et al.

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