Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

1994-03-08

1995-06-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437233, 437247, 437913, 148DIG16, 148DIG150, H01L 21265

Patent

active

054260647

ABSTRACT:
Method of fabricating a semiconductor device, such as a thin-film transistor, having improved characteristics and improved reliability. The method is initiated with formation of a thin amorphous silicon film on a substrate. A metallization layer containing at least one of nickel, iron, cobalt, and platinum is selectively formed on or under the amorphous silicon film so as to be in intimate contact with the silicon film, or these metal elements are added to the amorphous silicon film. The amorphous silicon film is thermally annealed to crystallize it. The surface of the obtained crystalline silicon film is etched to a depth of 20 to 200.ANG., thus producing a clean surface. An insulating film is formed on the clean surface by CVD or physical vapor deposition. Gate electrodes are formed on the insulating film.

REFERENCES:
patent: 5147826 (1992-09-01), Liu et al.
patent: 5275851 (1993-03-01), Fonash et al.

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