Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-07-18
2006-07-18
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S197000
Reexamination Certificate
active
07078324
ABSTRACT:
To form a semiconductor component having active regions separated from one another by trenches as isolation structures, a method involves forming a shallow trench in a semiconductor body, thereafter forming a deep trench within the shallow trench in the semiconductor body, and thereafter completely driving dopant atoms into the semiconductor body to form a well region doped with the dopant. The dopant may be previously introduced by implantation into a surface layer, and then the dopant is finally completely driven into the well region by thermally supported diffusion after forming the deep trench. The shallow and deep trenches together form a compound trench with stepped side walls. Two oppositely doped wells may be formed on opposite sides of the compound trench, which thus isolates the two wells from one another. Active regions may be formed in the two wells.
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Dudek Volker
Graf Michael
Atmel Germany GmbH
Dang Phuc T.
Fasse W. F.
Fasse W. G.
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