Method of fabricating a self-aligning damascene memory...

Details Method of fabricating a self-aligning damascene memory... Method of fabricating a self-aligning damascene memory...

2007-04-12

2009-12-08

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S197000, C438S700000, C257SE21170, C257SE21051, C257SE21227, C257SE21229, C257SE21304, C257SE21315, C257SE21267

Reexamination Certificate

active

07629247

ABSTRACT:
A method of forming a three-dimensional, non-volatile memory array utilizing damascene fabrication techniques is disclosed. A bottom set of conductors is formed and a set of first pillar shaped elements of heavily doped semiconductor material as formed thereon. A mold is formed of insulating material having pillar shaped openings self-aligned with the first pillar shaped elements and a second semiconductor is deposited over the mold to form second pillar shaped elements aligned with the first pillar shaped elements. The pillar elements formed may be further processed by forming another mold of insulating material having trench openings aligned with the pillar shaped elements and then filling the trenches with conductive material to form conductors coupled to the pillar shaped elements.

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International Search Report and Written Opinion of International Application No. PCT/US2008/004665 (SD-MXA244-PCT) mailed Jun. 25, 2008.

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