Method of fabricating a quantum device

Details Method of fabricating a quantum device Method of fabricating a quantum device

1998-06-08

2000-06-13

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with preceding...

438 46, 438962, H01L 2136, H01L 2100

Patent

active

060749369

ABSTRACT:
A method of fabricating quantum wire structures and devices, and quantum dot structures and devices comprise steps of: depositing an insulating layer on a semiconductor substrate, forming a line patterns and a square patterns in an insulating layer, forming a V-grooved patterned structures and a reverse quadrilateral pyramid patterned structures by thermal etching to evaporate portions of the quantum well layer that are not protected by line-shaped mask regions and square-shaped mask regions of the masking layer, forming a quantum wires and a quantum dots by alternatively growing a barrier layer and an active layer on a V-grooved patterned substrate and a reverse quadrilateral pyramid patterned substrate.

REFERENCES:
patent: 5436191 (1995-07-01), Paell et al.
patent: 5532184 (1996-07-01), Kato
patent: 5571376 (1996-11-01), Bestwick et al.
Realization of cresent-shaped SiGe quantum wire structures on a V-groove patterned Si substrate by gas-source Si molecular beam epitaxy: N. Usami, T. Mine, S. Fukatsu and Y. Shiraki; 1993; pp. 2789-2791.
Compositition profile of an AlGaAs epilayer on a V-grooved substrate grown by low-pressure metalorganic vapor phase epitaxy; Wugen Pan, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito and Yasuhiro Shiraki; 1995; pp. 959-961.

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