Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2005-07-05
2005-07-05
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Radiation or energy treatment modifying properties of...
C438S512000, C438S514000, C438S308000
Reexamination Certificate
active
06913982
ABSTRACT:
A probe of a scanning probe microscope (SPM) having a field-effect transistor (FET) structure at the tip of the probe, and a method of fabricating the probe are provided. The SPM probe having a source, channel, and drain is formed by etching a single crystalline silicon substrate into a V-shaped groove and doping the etching sloping sides at one end of the V-shaped groove with impurities.
REFERENCES:
patent: 5923033 (1999-07-01), Takayama et al.
patent: 6011261 (2000-01-01), Ikeda et al.
patent: 6415653 (2002-07-01), Matsuyama
patent: 8086788 (1996-04-01), None
Jeon Jong Up
Kuk Young
Lim Geun-bae
Pak Yukeun Eugene
Shin Hyun-jung
Huynh Yennhu B.
Jr. Carl Whitehead
Knobbe Martens Olson & Bear LLP
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