Method of fabricating a polysilicon thin film

Details Method of fabricating a polysilicon thin film Method of fabricating a polysilicon thin film

2006-04-04

2006-04-04

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S486000, C438S488000

Reexamination Certificate

active

07022591

ABSTRACT:
The present invention uses higher protrusions of an initially formed silicon layer as crystalline seeds in the subsequent crystallization step so that the newly-formed polysilicon thin film has smoother and bigger silicon grains, and has lesser density of protrusions. Furthermore, the polysilicon thin film of the present invention can be applied to form polysilicon thin film transistors or other devices.

REFERENCES:
patent: 6593215 (2003-07-01), Mori et al.
patent: 6677222 (2004-01-01), Mishima et al.
patent: 2002/0115245 (2002-08-01), Chang et al.
patent: 2004/0038438 (2004-02-01), Shih et al.
patent: 2004/0055999 (2004-03-01), Chen et al.
patent: 2004/0058076 (2004-03-01), Peng
patent: 2004/0201023 (2004-10-01), Yamazaki et al.
Brotherton et al., Excimer-Laser-Annealed Poly-Si Thin-Film Transistors inIEEE Transactions On Electron Devices, vol. 40, No. 2, pp. 407-413, Feb. 1993.
Zeng et al., A Novel Two-Step Laser Crystallization Technique for Low-Temperature Poly-Si TFTs inIEEE Transactions On Electron Devices, vol. 48, No. 5, pp. 1008-1010, May 2001.

Affiliated with

Also associated with

Rating

Method of fabricating a polysilicon thin film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a polysilicon thin film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a polysilicon thin film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3549633