Method of fabricating a polysilicon layer

Details Method of fabricating a polysilicon layer Method of fabricating a polysilicon layer

2007-06-26

2007-06-26

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S479000, C438S482000, C438S486000, C438S488000

Reexamination Certificate

active

10906007

ABSTRACT:
A method of fabrication a polysilicon layer is provided. A substrate is provided and then a buffer layer having a plurality of trenches thereon is formed over the substrate. Thereafter, an amorphous silicon layer is formed over the buffer layer. Finally, a laser annealing process is conducted so that the amorphous silicon layer melts and crystallizes into a polysilicon layer starting from the upper reach of the trenches. This invention can be applied to fabricate the polysilicon layer of a low temperature polysilicon thin film transistor liquid crystal display such that the crystals inside the polysilicon layer are uniformly distributed and have a larger average size.

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