Method of fabricating a polysilicon layer

Details Method of fabricating a polysilicon layer Method of fabricating a polysilicon layer

2005-03-15

2005-03-15

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S165000, C438S424000, C438S427000, C438S435000, C438S479000, C438S482000, C438S488000

Reexamination Certificate

active

06867074

ABSTRACT:
A method of fabrication a polysilicon layer is provided. A substrate is provided and then a buffer layer having a plurality of trenches thereon is formed over the substrate. Thereafter, an amorphous silicon layer is formed over the buffer layer. Finally, a laser annealing process is conducted so that the amorphous silicon layer melts and crystallizes into a polysilicon layer starting from the upper reach of the trenches. This invention can be applied to fabricate the polysilicon layer of a low temperature polysilicon thin film transistor liquid crystal display such that the crystals inside the polysilicon layer are uniformly distributed and have a larger average size.

REFERENCES:
patent: 5242530 (1993-09-01), Batey et al.
patent: 5736439 (1998-04-01), Yamazaki et al.
patent: 6558993 (2003-05-01), Ohtani et al.
patent: 6589824 (2003-07-01), Ohtani et al.
patent: 6602758 (2003-08-01), Kizilyalli et al.

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