Method of fabricating a poly-silicon thin film

Details Method of fabricating a poly-silicon thin film Method of fabricating a poly-silicon thin film

2006-03-31

2008-08-12

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S166000, C438S486000

Reexamination Certificate

active

07410889

ABSTRACT:
A silicon layer and a heat-retaining layer are formed on a substrate in turn, and a laser beam with a sharp energy density gradient is next utilized to perform a laser heating process for inducing super lateral growth crystallization occurred in part of the Si layer. The heat-retaining layer provides additional heating-enhancement function for the Si layer in crystallization so as to increase the super lateral growth length. Then, the laser beam is repeatedly moved to irradiate the substrate to finish the crystallization process for the full substrate.

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patent: 1304548 (2001-07-01), None

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