Method of fabricating a nonvolatile semiconductor memory

Details Method of fabricating a nonvolatile semiconductor memory Method of fabricating a nonvolatile semiconductor memory

2009-08-19

2010-11-23

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S259000, C438S593000, C257S288000, C257S296000

Reexamination Certificate

active

07838404

ABSTRACT:
A nonvolatile semiconductor memory fabrication method including forming a first insulating film and a floating gate electrode material on a semiconductor substrate; forming a gate insulating film and a floating gate electrode by etching the first insulating film and the floating gate electrode material, respectively, and forming a groove for an element isolation region by etching the semiconductor substrate; and forming an element region and the element isolation region by burying a second insulating film in the groove and planarizing the second insulating film.

REFERENCES:
patent: 5675159 (1997-10-01), Oku et al.
patent: 6222225 (2001-04-01), Nakamura et al.
patent: 6342715 (2002-01-01), Shimizu et al.
patent: 6555427 (2003-04-01), Shimizu et al.
patent: 7504304 (2009-03-01), Yaegashi et al.
patent: 2005/0212034 (2005-09-01), Sasago et al.
patent: 2006/0214217 (2006-09-01), Watanabe et al.
patent: 2006/0237754 (2006-10-01), Ishida
patent: 2007/0132007 (2007-06-01), Kamigaichi et al.
patent: 10-256399 (1998-09-01), None
patent: 11-163304 (1999-06-01), None
patent: 2001-118944 (2001-04-01), None
patent: 2003-289114 (2003-10-01), None
patent: 2004-22819 (2004-01-01), None
Yong-Sik Yim, et al., “70nm NAND Flash Technology with 0.25μm2Cell Size for 4Gb Flash Memory”, 4 pages, 2000.
Japanese Office Action issued Aug. 31, 2010, in Japanese Patent Application No. 2005-349045, filed Aug. 26, 2010 (with English-language Translation).

Affiliated with

Also associated with

Rating

Method of fabricating a nonvolatile semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a nonvolatile semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a nonvolatile semiconductor memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4194178