Method of fabricating a nickel silicide layer by conducting...

Details Method of fabricating a nickel silicide layer by conducting... Method of fabricating a nickel silicide layer by conducting...

2006-05-16

2008-10-07

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Forming schottky junction

Using platinum group metal

C438S583000, C257SE21438, C257SE21439

Reexamination Certificate

active

07432180

ABSTRACT:
A method of fabricating a semiconductor device comprises the step of forming a nickel monosilicide layer selectively over a silicon region defined by an insulation film by a self-aligned process. The self-aligned process comprises the steps of forming a metallic nickel film on a silicon substrate on which the insulation film and the silicon region are formed, such that the metallic nickel film covers the insulation film and the silicon region, forming a first nickel silicide layer primarily of a Ni2Si phase on a surface of the silicon region of the metallic nickel film by applying an annealing process to the silicon substrate, removing the metallic nickel film, after the step of forming the first nickel silicide layer, by a selective wet etching process, and converting the first nickel silicide layer to a second nickel silicide layer primarily of a NiSi phase by a thermal annealing process conducted in a silane gas.

REFERENCES:
patent: 2007/0015360 (2007-01-01), Lu et al.
patent: 61-12851 (1986-01-01), None
patent: 61-128521 (1986-01-01), None
patent: 2004-356216 (2004-12-01), None

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