Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2008-09-09
2008-09-09
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S118000, C438S455000, C438S459000, C438S692000, C257SE21122
Reexamination Certificate
active
11766463
ABSTRACT:
A method for fabricating a mixed substrate that include insulating material layer portions buried in a substrate of semiconductor material. The method includes providing a support substrate made of semiconductor material and having a front face that includes open cavities; providing a layer of an insulating material upon the front face of the support substrate and into the cavities; polishing the layer to provide a perfectly planar surface; bonding a source substrate to the planar surface of the support substrate; withdrawing a portion of the source substrate to provide an assembly having a thin useful or active layer upon the insulating layer of the support substrate; and heat treating the assembly in a selected atmosphere at a temperature and for a time sufficient to diffuse atoms from the insulating layer and through the thin layer to reduce the thickness of the insulating layer while retaining the insulating material in the cavities of the support substrate.
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Kostrzewa Marek
Letertre Fabrice
Fourson George
Parker John M
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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