Method of fabricating a misaligned, composite electrical contact

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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29591, 156652, 156656, 156664, 156665, 357 71, 427 82, 427 89, 427399, H01L 21283, H01L 21308, H01L 21316

Patent

active

043812155

ABSTRACT:
Disclosed is a method of fabricating an electrical contact to a region which lies at the surface of a semiconductor substrate and is doped opposite thereto. The method includes the steps of forming the combination of a silicide of a noble metal at the surface of the region, a layer of a barrier metal over the silicide, and a patterned conductor on a portion of the barrier metal layer which partly covers the region; etching partway through the portion of the barrier metal which is not covered by the patterned conductor; and thereafter oxidizing to completion, the portion of the barrier metal layer which is not covered by the patterned conductor and which remains after the etching step.

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patent: 4172004 (1979-10-01), Alcorn et al.
patent: 4267012 (1981-05-01), Pierce et al.
patent: 4289574 (1981-09-01), Radigan et al.
Hitchner et al. "Chromium . . . Barrier" IBM Technical Disclosure, vol. 22, No. 10 (3/80) p. 4516.

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