Method of fabricating a microfabricated high aspect ratio...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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C438S050000, C073S514320

Reexamination Certificate

active

06960488

ABSTRACT:
A microfabricated device having a high vertical aspect ratio and electrical isolation between a structure region and a circuit region. The device may be fabricated on a single substrate and may include electrical interconnections between the structure region and the circuit region. The device includes a substrate and an isolation trench surrounding a structure region in the substrate. The isolation trench includes a lining of a dielectric insulative material. A plurality of microstructure elements are located in the structure region and are laterally anchored to the isolation trench.

REFERENCES:
patent: 3725671 (1973-04-01), Keister et al.
patent: 3936329 (1976-02-01), Kendall et al.
patent: 3962052 (1976-06-01), Abbas et al.
patent: 4049903 (1977-09-01), Kobler
patent: 4063271 (1977-12-01), Bean et al.
patent: 4307507 (1981-12-01), Grey et al.
patent: 4369565 (1983-01-01), Muramatsu
patent: 4631803 (1986-12-01), Hunter et al.
patent: 4698900 (1987-10-01), Esquivel
patent: 4764644 (1988-08-01), Reisman et al.
patent: 4874484 (1989-10-01), Foell et al.
patent: 5126810 (1992-06-01), Gotou
patent: 5131978 (1992-07-01), O'Neill
patent: 5262021 (1993-11-01), Lehmann et al.
patent: 5271801 (1993-12-01), Valette
patent: 5447884 (1995-09-01), Fahey et al.
patent: 5565625 (1996-10-01), Howe et al.
patent: 5569852 (1996-10-01), Marek et al.
patent: 5627317 (1997-05-01), Offenberg et al.
patent: 5637189 (1997-06-01), Peeters et al.
patent: 5744719 (1998-04-01), Werner
patent: 5747353 (1998-05-01), Bashir et al.
patent: 5807783 (1998-09-01), Gaul et al.
patent: 6046067 (2000-04-01), Werner
patent: 6133059 (2000-10-01), Werner
patent: 0 822 578 (1998-04-01), None
patent: 1-138110 (1989-05-01), None
patent: WO 95/08775 (1995-03-01), None
M. de Boer et al., The Black Silicon Method V: A Study of The Fabricating of Movable Structures for Micro Electromechanical Systems. IEEE 1995, pp. 565-568.
Cheung P. et al., Identification, Position Sensing, and Control of an Electrostatically-driven Polysilicon Microactuator. 1995, IEEE, pp. 3545-3550.
Bronihan T. et al., Embedded Interconnect and Electrical Isolation for High-Aspect-Ration, SOI inertial Instruments., 1997, IEEE, pp. 637-640.
W. Lang et al., “Application of porous silicon as a sacrificial layer,” 7th International Conference on Solid-State Sensors and Actuators Digest of Tech. Papers. pp.202-205, Jun. 7-10, 1993.
Gianchandani et al., “Micron-Sized, High Aspect Ratio Bulk Silicon Micromechanical Devices,”Micro Electro Mechanical Systems '92, 3 pgs., Feb. 4-7, 1992.
C.H. Hsu et al., “Micromachined Structures Fabricated Using a Wafer-Bonded Sealed Cavity Process,” Solid-State Sensor and Actuator Workshop Hilton Head, S. Caroline, Jun. 13-16, 1994, 151-155.
J. Mohan et al., “An Integrated Accelerometer as a Demonstration of a New Technology Using Silicon Fusion Bonding and Deep Reactive Ion Etching,” Stanford University, Center for Integrated Systems, 21-22.
L. Parameswaran et al., “Sealed-Cavity Microstructure using Wafer Bonding Technology,” The 7th International Conference on Solid-State Sensors and Actuators, 274-277.
L. Parameswaran et al., “A Merged MEMS-CMOS Process using Silicon Wafer Bonding,” IEEE 1995, 4 pgs.
K.A. Shaw et al., “Integrating Scream Micromachined Devices with Integrated Circuits,” IEEE 1996, 44-49.
K.A. Shaw et al., “Scream I: a single mask, single-crystal silicon, reactive ion etching process for microelectromechanical structures”, School of Electrical Engineering and National Nanofabrication Facility, Cornell University, Ithaca, NY 14853 (USA).

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