Method of fabricating a microelectronic vacuum triode structure

Details Method of fabricating a microelectronic vacuum triode structure Method of fabricating a microelectronic vacuum triode structure

1992-08-04

1995-04-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566591, 156662, 156653, 437191, 437228, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

054095689

ABSTRACT:
An improved vacuum microelectronic device comprised of a first polysilicon layer-having hornlike protrusions forming the emitter of the device, a first insulating layer separating the first polysilicon layer from a second polysilicon layer forming the grid of the device; a second insulating layer separating the second and third polysilicon layers. A portion of the first insulating layer, the second polysilicon layer, and second insulating layers are removed to form a grid aperture region positioned directly above the hornlike protrusion of the emitter. A cavity exists between the grid aperture region and a third polysilicon layer. The cavity is evacuated to form the vacuum region of the device.

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