Method of fabricating a metal wiring line

Details Method of fabricating a metal wiring line Method of fabricating a metal wiring line

1997-09-30

1999-12-14

Fourson, George

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438645, 438672, H01L 2128

Patent

active

060017325

ABSTRACT:
A method of fabricating a metal wiring line includes providing a semiconductor substrate having a region desired for connecting with the metal wiring line, wherein a first dielectric layer is formed to cover the semiconductor substrate and a plurality of substantially parallel oxide pillars are formed on the first dielectric layer. The metal wiring line is then formed to contact the desired connecting region, and a second metal layer is then formed to contact the metal wiring line.

REFERENCES:
patent: 5893749 (1999-04-01), Matumoto
Wolf et al, "Silicon Processing, Process Technology", Lattice Press, 1986, p. 183.

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