Method of fabricating a metal contact structure

Details Method of fabricating a metal contact structure Method of fabricating a metal contact structure

1997-04-23

1998-12-22

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438639, 438647, H01L 2128

Patent

active

058519149

ABSTRACT:
A method for fabricating a metal contact structure of semiconductor devices comprising forming a first conducting layer; a first insulating layer disposed on said first conducting layer; a first contact hole to said first conducting layer; wherein said first contact hole is formed in said first insulating layer; dummy conducting patterns formed in said first contact hole, wherein said conducting dummy patterns are contacted with said first conducting layer through said first contact hole, and said dummy film is partly overlapped on the said first insulating layer; a second insulating layer disposed on said first insulating layer; a second contact hole, wherein said second contact hole is formed in said second insulating layer, and wherein said first contact hole and said second contact hole substantially form a through-hole; and a second conducting layer disposed on said second insulating layer which is contacted to said dummy conducting patterns through said second contact hole.

REFERENCES:
patent: 4800177 (1989-01-01), Nakamae
patent: 5174858 (1992-12-01), Yamamoto et al.
patent: 5258096 (1993-11-01), Sandhu et al.
patent: 5525552 (1996-06-01), Huang

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