Method of fabricating a metal cap layer with enhanced etch...

Details Method of fabricating a metal cap layer with enhanced etch... Method of fabricating a metal cap layer with enhanced etch...

2009-06-29

2011-12-27

Chambliss, Alonzo (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S672000, C438S745000, C257SE23011, C257SE23145, C257SE21575, C257SE21577

Reexamination Certificate

active

08084354

ABSTRACT:
During the fabrication of sophisticated metallization systems of semiconductor devices, material deterioration of conductive cap layers may be significantly reduced by providing a noble metal on exposed surface areas after the patterning of the corresponding via openings. Hence, well-established wet chemical etch chemistries may be used while not unduly contributing to process complexity.

REFERENCES:
patent: 7800228 (2010-09-01), Yang et al.
patent: 2004/0238961 (2004-12-01), Cunningham
patent: 2006/0030143 (2006-02-01), Ivanov
patent: 2007/0077761 (2007-04-01), Lehr et al.
patent: 2008/0206986 (2008-08-01), Preusse et al.
patent: 2009/0206485 (2009-08-01), Yang et al.
patent: 102008021568 (2010-02-01), None
Translation of Official Communication from German Patent Office for German Patent Application No. 10 2008 049 775.4 dated May 17, 2010.

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