Method of fabricating a MESFET with a sloped MESA structure

Details Method of fabricating a MESFET with a sloped MESA structure Method of fabricating a MESFET with a sloped MESA structure

2007-12-13

2010-02-02

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S182000, C438S412000, C438S574000, C438S713000, C257SE21037, C257SE21054, C257SE21450, C257SE21605

Reexamination Certificate

active

07655514

ABSTRACT:
A silicon carbide metal semiconductor field-effect transistor includes a bi-layer silicon carbide buffer for improving electron confinement in the channel region and/or a layer disposed over at least the channel region of the transistor for suppressing surface effects caused by dangling bonds and interface states. Also, a sloped MESA fabrication method which utilizes a dielectric etch mask that protects the MESA top surface during MESA processing and enables formation of sloped MESA sidewalls.

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