Method of fabricating a lightly doped drain thin-film transistor

Details Method of fabricating a lightly doped drain thin-film transistor Method of fabricating a lightly doped drain thin-film transistor

1997-01-27

1998-07-14

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 57, 257 59, 257 61, 257347, 438158, 438159, H01L 2904, H01L 2976, H01L 2701

Patent

active

057809038

ABSTRACT:
A lightly doped drain thin-film transistor having an inverted staggered structure. The transistor has a glass substrate and a gate formed by a Cr layer on the substrate. An insulating layer and a semiconductor layer are deposited on the substrate and the gate. A first photo-resist layer is coated on top of the semiconductor layer. Back-side exposure and self-aligned technique are used to form an unexposed area slightly smaller than the gate area with high energy light. Low energy ion implantation is then performed on the exposed semiconductor layer to produce the lightly doped region. After removing the first photo-resist layer, another photo-resist process including a second photo-resist coating, back-side exposure and self-aligned technique is performed to form an unexposed area slightly larger than the gate area with low energy light. High energy ion implantation is then performed on the exposed semiconductor layer. The twice photo-resist processes and ion implantation processes result in a lightly doped drain.

REFERENCES:
patent: 4862234 (1989-08-01), Koden
patent: 5235189 (1993-08-01), Hayden et al.
patent: 5324674 (1994-06-01), Possin et al.
patent: 5403761 (1995-04-01), Rha
patent: 5471070 (1995-11-01), Shimada et al.

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