Method of fabricating a hybrid substrate

Details Method of fabricating a hybrid substrate Method of fabricating a hybrid substrate

2007-08-01

2009-08-18

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S455000, C438S458000, C438S522000, C438S530000, C257SE21088, C257SE21122, C257SE21237, C257SE21561, C257SE21568

Reexamination Certificate

active

07575988

ABSTRACT:
A method of fabricating a hybrid substrate by direct bonding of donor and receiver substrates where each substrate has a respective front face and surface, with the front face of the receiver substrate having a semiconductor material near the surface, and the donor substrate including a zone of weakness that defines a layer to be transferred. The method includes preparing the substrate surfaces by exposing the surface of the receiver substrate to a temperature from about 900° C. to about 1200° C. in an inert atmosphere for at least 30 sec; directly bonding together the front faces of the prepared substrates to form a composite substrate; heat treating the composite substrate to increase bonding strength between the front surfaces of the donor and receiver substrates; and transferring the layer from the donor substrate by detaching the remainder of the donor substrate at the zone of weakness.

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